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| semitop ? 2 igbt module sk30gb123 sk30gal123 SK30GAR123 preliminary data features ! " # ! ! $ % # & ' typical applications ( $ ) ( * " ( gb gal gar absolute maximum ratings # + , - . / symbol conditions values units igbt 0 1 ( # 2 + , - . 4 , 5 5 0 $ # 2 + 4 , - . # + , - . 6 6 7 # + 8 5 . , , 7 $ 9 : $ 9 : + , $ - 5 7 0 % 1 ( ; , 5 0 0 + < 5 5 0 = 0 % 1 > , 5 0 = 0 1 ( ? 4 , 5 5 0 # 2 + 4 , - . 4 5 @ inverse diode $ a # 2 + 4 - 5 . # + , - . 6 b 7 # + 8 5 . , - 7 $ a 9 : $ a 9 : + , $ a 7 $ a ( : + 4 5 = ) # 2 + 4 - 5 . 6 - 5 7 module $ 9 : ( 7 # ) 2 ! c 5 d d d e 4 - 5 . # ! c 5 d d d e 4 , - . 0 7 / 4 d , - 5 5 0 characteristics # + , - . / symbol conditions min. typ. max. units igbt 0 % 1 0 % 1 + 0 1 / $ + 4 7 c / - - / - < / - 0 $ 1 ( 0 % 1 + 5 0 / 0 1 + 0 1 ( # 2 + , - . 5 / 4 - 7 # 2 + 4 , - . 7 $ % 1 ( 0 1 + 5 0 / 0 % 1 + 6 5 0 # 2 + , - . 4 , 5 7 # 2 + 4 , - . 7 0 1 5 # 2 + , - . 4 / , 0 # 2 + 4 , - . 4 / , 0 1 0 % 1 + 4 - 0 # 2 + , - . - , f # 2 + 4 , - . b < f 0 1 $ + , - 7 / 0 % 1 + 4 - 0 # 2 + , - . ) d , , / - 6 0 # 2 + 4 , - . ) d 6 / 4 6 / b 0 4 / < - a 0 1 + , - / 0 % 1 + 5 0 + 4 : g 5 / , - a 5 / 4 4 a c 5 9 % + , - f 0 + < 5 5 0 c - 1 $ + , - 7 6 / - h 9 % + , - f # 2 + 4 , - . 6 5 5 0 % 1 + ; 4 - 0 c - 1 , / < h 9 2 ! $ % # 4 i j k sk30gb123 1 08-03-2007 sct ? by semikron semitop ? 2 igbt module sk30gb123 sk30gal123 SK30GAR123 preliminary data features ! " # ! ! $ % # & ' typical applications ( $ ) ( * " ( gb gal gar characteristics symbol conditions min. typ. max. units inverse diode 0 a + 0 1 $ a + , - 7 = 0 % 1 + 5 0 # 2 + , - . ) d , , / - 0 # 2 + 4 , - . ) d 4 / 8 , / 6 0 0 a 5 # 2 + 4 , - . 4 4 / , 0 a # 2 + 4 , - . 6 , c c f $ 9 9 : $ a + , , 7 # 2 + 4 , - . , - 7 l j + ! - 5 5 7 j @ c / - @ 1 0 + < 5 5 0 4 h 9 2 ! 4 / , i j k : m : 4 , 4 n this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. sk30gb123 2 08-03-2007 sct ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 6 typ. gate charge characteristic sk30gb123 3 08-03-2007 sct ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 10 cal diode forward characteristic sk30gb123 4 08-03-2007 sct ? by semikron ul recognized file no. e 63 532 # 8 ( / " / o , # 8 % # 8 % 7 ' # 8 % 7 9 sk30gb123 5 08-03-2007 sct ? by semikron |
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